IJSEA Archive (Volume 2, Issue 4)
International Journal of Science and Engineering Applications (IJSEA) (Volume 2, Issue 4 - April 2013)
Electronic and Spectroscopic Study of the GaAs nitridation – Electronic Characterization Associated
Nacera Bachir Bouiadjra, Zineb Benamara, Abdelkrim Sellam, Luc Bideux, Christine Robert, Bernard Gruzza
Keywords: GaAs, GaN, XPS, I-V characterization, Schottky diode.
Gallium nitride is one of the III-V semiconductors the most promising in many application areas.
Indeed, because of its large direct bandgap (3,4 eV), it can be dedicated to both optoelectronic
applications as transistors achieve hyper frequency. It allows the manufacture of components stable
at high temperatures and high frequencies. In this work we are interested in the nitriding of
gallium arsenide substrates of n-type in order to obtain a thin layer of GaN. The samples were
chemically cleaned immediately introduced into the chamber ultra-high vacuum. They then undergo
ionic cleaning in situ by argon ions. Spectrometric analyzes do show the absence of any impurities
from the surface, in fact, it only detects the presence of gallium and arsenic. Before proceeding
to the nitriding of our structures, deposition of gallium is conducted for 20 minutes to send then
simultaneously nitrogen and gallium. Analyzes were performed elaborate structures using X-ray
photoelectron spectroscopy (XPS). Deposition of mercury (Hg) has been developed on the structures,
we have then made an electrical characterization I-V to see the effect of nitriding on the
resulting structure.
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@article{nacera02041006,
title = "Facial Feature Extraction Based on Local Color and Texture for Face Recognition using Neural Network ",
journal = "International Journal of Science and Engineering Applications (IJSEA)",
volume = "2",
number = "3",
pages = "83 - 86 ",
year = "2013",
author = "Nacera Bachir Bouiadjra, Zineb Benamara, Abdelkrim Sellam, Luc Bideux, Christine Robert, Bernard Gruzza ",
}